21 May 2015The NTP8G202N is a power GaN cascode transistor, capable of 600 V operation and with an RDSon of 290 mΩ. The device is a single N-Channel device and is housed in a TO-220. The NTP8G206N is a similar device but with an RDSon of 150 mΩ.
GaN transistors offer a performance leap for switching power supplies and other applications where efficiency and power density are critical. Compared to Si, GaN device switch faster and have lower RDSon, leading to systems that are smaller, lighter and need less cooling.
With typical on-resistances of 290 and 150 mΩ, the two new products, NTP8G202N and NTP8G206N are offered in an optimized TO-220 package for easy integration with customers’ existing circuit board manufacturing capabilities.
Both of the 600 V products have been qualified using JEDEC standards and are in mass production.